COM Team

Responsible : Catherine MARICHY

The Thin Films team works mainly on the elaboration and characterization of thin films whose thickness can vary from a few atomic monolayers to several tens of µm. The deposited materials are mainly semiconductors (SiC, GaN, ZnO, Si) and insulators (BN, SiO₂, ZrO₂, TiO₂, Al₂O₃). To do so, the team members use different chemical deposition techniques (CVD, VLS, Sol-gel, PDC) for applications, through both academic and industrial collaborations, as different as power electronics, cell phones, aerospace, hydrophilic or hydrophobic coatings… The COM team has been working for many years with ST Microelectronics, UMS, III-V lab and SOITEC

Our activities are essentially divided into four themes:

1. Large gap semiconductor epitaxy. The team, which has a historical competence on the synthesis of SiC by homo- and hetero-epitaxy, is currently interested in the surface structuring of 4H-SiC. The fabrication and the study of nitride-based heterostructures for power electronics applications are the subject of a strong research partnership. Finally, the deposition of boron carbide by CVD is an emerging subject.
2. Synthesis of ultra-thin films and nanostructures by ALD. Particular attention is paid to the mechanisms involved in the growth process, especially with regard to the deposition of boron-based materials. Also alternative ALD approaches are studied.
3. Chemistry and cultural legacy.

The team members are also strongly involved in the ASCI joint laboratory.